WebCitation. Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2024. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2024 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). Version: Author's final manuscript. Web19 jun. 2024 · In this work, a physics based analytical model has been proposed for an open gate AlGaN/GaN HEMT for electrical detection of biomolecules-uricase, glucose, biotin and cytochrome -c. The proposed...
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