http://www.ichemistry.cn/cas/TDMAT.htm WebOct 18, 2007 · Atomic layer deposition (ALD) of Ti O 2 thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds of Ti precursors and water as another reactant was investigated. Ti O 2 films with high purity can be grown in a self-limited ALD growth mode by using either Ti isopropoxide or TDMAT as Ti precursors. Different …
MOCVD of TiN and/or Ti from new precursors - ScienceDirect
WebOct 1, 1995 · Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N(CH{sub 3}){sub 2}]{sub 4})) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH{sub 3}). The resistivity of the … Webthrough the center line (B) and diluted TDMAT vapor through the outer two lines. In the reverse configura-tion, only nonconductive orange films could be made. Laminar flow conditions were used (Reynolds number, 30), though some turbulent mixing occurred near the inlets when dilution flows were high. Reactant flows interview follow up message
Titanium TDMAT CAS Number 3275-24-9 - Strem
WebTDMAT coreactant, and the objective is to remove as much carbon as possible in the film. TDMAT was delivered from an Air Products canister heated at 40°C to obtain a vapor pressure of 0.3 Torr and pressurized under argon Ar carrier gas at 60 Torr. To avoid TDMAT condensation in the system, a positive thermal gradient was established from the Web前驱体材料. 前驱体,顾名思义就是获得目标产物前的一种存在形式,大多是以有机-无机配合物或混合物固体存在,也有部分是以溶胶形式存在。. 前驱体这一说法多见于溶胶凝胶 … Web· Trade name: Tetrakis(dimethylamino)titanium(IV), 99% TDMAT · Item number: 93-2240 · CAS Number: 3275-24-9 · EC number: 221-904-3 · Details of the supplier of the safety … interview follow up phone call